Measurement-based large-signal diode modeling system for circuit and device design
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 41 (12) , 2211-2217
- https://doi.org/10.1109/22.260708
Abstract
IEEE TRANS. MICROWAVE THEORY TECHNKeywords
This publication has 8 references indexed in Scilit:
- Accurate on-wafer power and harmonic measurements of MM-wave amplifiers and devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Large-signal relaxation-time model for HEMTs and MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 50 GHz sampler hybrid utilizing a small shockline and an internal SRDPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ku- and K-band GaAs MMIC varactor-tuned FET oscillators using MeV ion-implanted buried-layer back contactsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A Large-Signal Equivalent Circuit Model for Hyperabrupt P-N Junction Varactor DiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device DataPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Improved small-signal equivalent circuit model and large-signal state equations for the MOSFET/MODFET wave equationIEEE Transactions on Electron Devices, 1991
- Bias dependence of the MODFET intrinsic model elements values at microwave frequenciesIEEE Transactions on Electron Devices, 1989