High extraction efficiency InGaN micro-ring light-emitting diodes
- 24 November 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (22) , 4483-4485
- https://doi.org/10.1063/1.1630352
Abstract
Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.Keywords
This publication has 12 references indexed in Scilit:
- Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodesJournal of Applied Physics, 2003
- Comparison of optical transitions in InGaN quantum well structures and microdisksJournal of Applied Physics, 2001
- InGaN/GaN quantum well interconnected microdisk light emitting diodesApplied Physics Letters, 2000
- The Chemistry of GaN GrowthMRS Proceedings, 2000
- Investigation of Sidewall Recombination in GaN Using a Quantum Well ProbeMRS Proceedings, 2000
- Optical modes within III-nitride multiple quantum well microdisk cavitiesApplied Physics Letters, 1998
- Raman determination of phonon deformation potentials in α-GaNSolid State Communications, 1996
- Estimation of in-plane superluminescence in vertical-cavity surface-emitting lasersIEE Proceedings - Optoelectronics, 1996
- Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection SpectroscopySolid State Communications, 1996
- Conductance statistics of small-area ohmic contacts on GaAsApplied Physics Letters, 1990