Estimation of in-plane superluminescence in vertical-cavity surface-emitting lasers

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Abstract
‘In-plane’ superluminescence (IPSL) in VCSELs is analysed in the framework of the ray approximation. The results show that, for typical geometry and dimensions of vertical-cavity surface-emitting lasers, the IPSL can play an important role and may lead to significant additional losses (referred to vertical lasing) of pump power for large diameter devices (10–100 µm). It is found that, for AlAS/GaAs device diameters in excess of about 50 µm, the IPLS can become sufficiently large such that lasing along the radius may result.