Thermal properties of etched-well surface-emitting semiconductor lasers
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (6) , 1391-1401
- https://doi.org/10.1109/3.89956
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Low-threshold vertical cavity surface-emitting lasers with metallic reflectorsApplied Physics Letters, 1990
- Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasersApplied Physics Letters, 1990
- Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirrorElectronics Letters, 1990
- GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two-dimensional laser arrayApplied Physics Letters, 1988
- GaAlAs/GaAs MOCVD Growth for Surface Emitting LaserJapanese Journal of Applied Physics, 1987
- GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO2/SiO2 Multilayer Bragg ReflectorJapanese Journal of Applied Physics, 1987
- Thermal properties of the Burrus-type light-emitting diode: Part I—The modelIEEE Transactions on Electron Devices, 1986
- Thermal resistance of light-emitting diodesIEEE Transactions on Electron Devices, 1985
- Electron mobility in AlxGa1−xAsJournal of Applied Physics, 1979
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968