Ohmic contacts and transport properties in ZnSe-based heterostructures
- 2 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 464-470
- https://doi.org/10.1016/0022-0248(94)90851-6
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Acceptor doping in ZnSe versus ZnTeApplied Physics Letters, 1993
- Room temperature continuous operation of blue-green laser diodesElectronics Letters, 1993
- Au(Pt)Pd ohmic contacts to p -ZnTeElectronics Letters, 1993
- Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma sourceApplied Physics Letters, 1993
- Ti/Pt/Au Ohmic Contacts to n-Type ZnSeJapanese Journal of Applied Physics, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- The Energy Levels of Zn and Se in (AlxGa1-x)0.52In0.48PJapanese Journal of Applied Physics, 1985
- Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x-ray photoelectron spectroscopy (XPS)Journal of Vacuum Science and Technology, 1982
- Photoluminescence study of acceptors in AlxGa1−xAsJournal of Applied Physics, 1982
- Shallow Acceptor States in ZnTe and CdTePhysical Review B, 1966