Theory of electron resonant tunneling of Si-based double-barrier structures
- 1 March 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (5) , 2402-2410
- https://doi.org/10.1063/1.353094
Abstract
We present theoretical studies of resonant-tunneling characteristics of Si-based double-barrier structures within a tight-binding model. The model consists of four antibonding (sp3) orbitals per lattice site and is capable of describing the low-lying conduction bands accurately throughout the entire Brillouin zone. Current-voltage curves for some selected Si/Ge strained-layer double-barrier structures and lattice-matched Si/GaP double-barrier structures for different crystallographic orientations are calculated. Negative differential resistances are found for these structures.This publication has 33 references indexed in Scilit:
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