The effect of carbon on oxygen precipitation in high carbon CZ silicon crystals
- 1 December 1983
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 18 (12) , 1437-1441
- https://doi.org/10.1016/0025-5408(83)90181-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Thermally induced microdefects in Czochralski-grown silicon crystalsJournal of Crystal Growth, 1982
- Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth BehaviorJapanese Journal of Applied Physics, 1982
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979