TiW silicide-gate technology for self-aligned GaAs FET

This publication has 6 references indexed in Scilit:

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  IEEE Journal of Solid-State Circuits, 1983
• Characterization of WSix/GaAs Schottky contacts
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  IEEE Electron Device Letters, 1983
• TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's
  IEEE Transactions on Electron Devices, 1982
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