Concentration of native point defects in Si single crystals at high temperatures

The concentration of dominant native defects in a float-zoned Si single crystal at high temperatures was directly determined from the difference between the macroscopic linear thermal expansion and the lattice-parameter thermal expansion. The concentration fraction of native defects in thermal equilibrium at 1300 K is (3.6±2.7)×${10}^{\mathrm{-}7}$, or (1.8±1.3)×${10}^{16}$ atoms ${\mathrm{cm}}^{\mathrm{-}3}$. It is found that vacancies are predominant over interstitial atoms in concentration.