Absolute thermal expansion measurements of single-crystal silicon in the range 300?1300 K with an interferometric dilatometer
- 1 November 1988
- journal article
- research article
- Published by Springer Nature in International Journal of Thermophysics
- Vol. 9 (6) , 1101-1109
- https://doi.org/10.1007/bf01133277
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A high-temperature dilatometer using optical heterodyne interferometryJournal of Physics E: Scientific Instruments, 1987
- A practical measurement system for the accurate determination of linear thermal expansion coefficientsJournal of Physics E: Scientific Instruments, 1984
- Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 KJournal of Applied Physics, 1984
- Thermal expansion reference data: silicon 300-850 KJournal of Physics D: Applied Physics, 1981
- Linear thermal expansion measurements on silicon from 6 to 340 KJournal of Applied Physics, 1977
- Thermal expansion of reference materials: copper, silica and siliconJournal of Physics D: Applied Physics, 1973
- Thermal Expansion of Copper from 20 to 800 K—Standard Reference Material 736Journal of Applied Physics, 1970
- Thermal Expansion of Silicon and Zinc Oxide (I)Physica Status Solidi (b), 1969