Slip systems and misfit dislocations in InGaN epilayers
- 22 December 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (25) , 5187-5189
- https://doi.org/10.1063/1.1633029
Abstract
We have studied the microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgrown GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislocations, slip occurs with the formation of periodic arrays of misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces. This letter presents a comprehensive analysis of slip systems in the wurtzite structure and considers the role of threading dislocations in strain relaxation in InGaN alloys.Keywords
This publication has 16 references indexed in Scilit:
- Microstructure and electronic properties of InGaN alloysPhysica Status Solidi (b), 2003
- Epitaxial lateral overgrowth techniques used in group III nitride epitaxyJournal of Physics: Condensed Matter, 2001
- InGaN-based violet laser diodesSemiconductor Science and Technology, 1999
- Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowthApplied Physics Letters, 1998
- Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) systemApplied Physics Letters, 1992
- Variation in misfit dislocation behavior as a function of strain in the GeSi/Si systemApplied Physics Letters, 1989
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974