Subpicosecond cooling of photoexcited hot carriers studied by one-beam excite-and-probe Raman scattering
- 28 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (22) , 2210-2212
- https://doi.org/10.1063/1.102969
Abstract
A technique using a single picosecond laser beam to excite and probe photoexcited hot electron and hole plasma by inelastic light scattering is proposed. The cooling rate of the hot electrons is determined by varying the pulse width of the laser beam. The technique is illustrated by measuring the subpicosecond cooling of hot carriers in GaAs and InGaAs. The advantages and limitations of the technique are discussed.Keywords
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