The influence of surface oxidation on the pH-sensing properties of silicon nitride
- 1 September 1999
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 58 (1-3) , 450-455
- https://doi.org/10.1016/s0925-4005(99)00125-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The pH-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor depositionSensors and Actuators B: Chemical, 1997
- Development of a pH-sensitive ISFET suitable for fabrication in a volume production environmentSensors and Actuators B: Chemical, 1995
- Comparison of the hysteresis of Ta2O5 and Si3N4 pH-sensing insulatorsSensors and Actuators B: Chemical, 1994
- Improvement of structural instability of the ion-sensitive field-effect transistor (ISFET)Sensors and Actuators B: Chemical, 1993
- Oxidation of silicon (oxy)nitride and nitridation of silicon dioxide: Manifestations of the same chemical reaction system?Thin Solid Films, 1990
- Ion-sensing devices with silicon nitride and borosilicate glass insulatorsIEEE Transactions on Electron Devices, 1987
- Stability of silicon nitride/silicon dioxide/silicon electrodes used in pH microelectronic sensorsSensors and Actuators, 1984
- Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interfaceIEEE Transactions on Electron Devices, 1983
- A study of insulator materials used in ISFET gatesThin Solid Films, 1978