Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities
- 21 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (12) , 1381-1383
- https://doi.org/10.1063/1.107544
Abstract
Si/SiO2 Fabry–Pérot microcavities with rare‐earth‐doped SiO2 active regions are realized for the first time. Cavity‐quality factors exceeding Q=300 are achieved with structures consisting of two Si/SiO2 distributed Bragg reflectors and an Er‐implanted (λ/2) SiO2 active region. The room‐temperature photoluminescence intensity of the on‐axis emission is 1–2 orders of magnitude higher for resonant cavity structures as compared to structures without a cavity.Keywords
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