Dark-capacitance transients in MIS tunnel diodes
- 31 May 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (5) , 465-472
- https://doi.org/10.1016/0038-1101(83)90103-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Tunneling relaxation time measurements in thin oxide metal oxide semiconductor capacitorsApplied Physics Letters, 1982
- Photoionization cross section and density of interface states in MOS structuresApplied Physics Letters, 1980
- Statistics of trap photoemission in MIS tunnel diodesSolid-State Electronics, 1979
- Characteristics of Cr-SiO2-nSi tunnel diodesSolid-State Electronics, 1977
- The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniquesSolid-State Electronics, 1976