Properties of GaInAs(P)/InP multilayers and superlattices grown by MOVPE at atmospheric pressure
- 2 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4) , 292-297
- https://doi.org/10.1016/0022-0248(91)90192-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integrationJournal of Crystal Growth, 1991
- A new versatile, large size MOVPE reactorJournal of Crystal Growth, 1988
- Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopiesApplied Physics Letters, 1987
- Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1986