Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies

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Abstract
Superlattices of Ga0.47In0.53As/InP grown by chemical beam epitaxy (CBE) were studied in detail by transmission electron microscopy, absorption, photoluminescence (PL), photoluminescence excitation (PLE), and photocurrent (PC) spectroscopies. Results from all these characterization techniques independently confirmed the superior qualities of the CBE‐grown Ga0.47In0.53As/InP superlattices over previously reported results. Photoluminescence linewidths were close to those obtained from CBE‐grown single quantum wells. All of the observed excitonic absorption peaks in absorption, PLE, and PC spectra were well resolved and clearly assigned including the forbidden E13h transition for the first time. In fact, these excitonic structures were still observed in the PC spectra at temperatures as high as 102 °C.