On indentation dislocation rosettes in silicon
- 1 April 1975
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (4) , 1470-1472
- https://doi.org/10.1063/1.321797
Abstract
The structure of dislocation rosettes generated by microindentation in 〈100〉 silicon is discussed and then verified experimentally. Dislocation loops in the rosettes move on glide prisms that are formed by two {111} planes and the surface plane, the width of the prism being equal to the size of the indent. The size of the dislocation rosette is also discussed using a rudimentary model.This publication has 2 references indexed in Scilit:
- Effects of surface films and film edges on dislocation movement in siliconJournal of Applied Physics, 1975
- Dislocations in Indented Magnesium Oxide CrystalsJournal of Applied Physics, 1960