Effects of surface films and film edges on dislocation movement in silicon
- 1 April 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (4) , 1465-1469
- https://doi.org/10.1063/1.321796
Abstract
We report the observation of two effects of surface films on the movement of dislocations in silicon substrates. One is the retarded movement of dislocations near the film−covered surface. The second effect is associated with the discontinuities in the surface films on continuous substrates and is either a blocking or an enhancement of the movement of dislocation loops in the vicinity of the discontinuities—depending on the direction of the movement. We conceive a model to explain that the second effect is the result of differential contraction between the film−substrate composite, giving rise to a nonvanishing shear stress component τzx, which peaks in the vicinity of the film discontinuity. These two effects are demonstrated by the observation of the consequent response of the shape and the size of indentation dislocation rosettes and the distribution of dislocation loops in the rosettes.This publication has 4 references indexed in Scilit:
- On indentation dislocation rosettes in siliconJournal of Applied Physics, 1975
- Dislocations in thermally stressed silicon wafersApplied Physics Letters, 1973
- Temperature Distribution and Stresses in Circular Wafers in a Row During Radiative CoolingJournal of Applied Physics, 1969
- Thermal Stress and Plastic Deformation of Thin Silicon SlicesJournal of Applied Physics, 1969