Dislocations in thermally stressed silicon wafers
- 1 March 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (5) , 261-264
- https://doi.org/10.1063/1.1654632
Abstract
To the author's knowledge, this is the first letter on the dislocation structures generated in silicon wafers by thermal stresses. These dislocations were caused by cooling in a room‐temperature ambient on removal from a furnace. The 〈110〉 60° type was dominant, although 〈112〉 dislocations were also observed. Their most important feature is that they tend to seek the shortest allowable paths in passing through the wafer thicknesswise. They often form fairly regular arrays in single or closely neighboring {111} planes, thus producing ensembles of etch pits (or mounds) that macroscopically resemble slip lines. The dislocation densities were often ∼104 cm−2; these values agreed within an order of magnitude with those predicted by a simple stress relief mechanism.Keywords
This publication has 8 references indexed in Scilit:
- Temperature Distribution and Stresses in Circular Wafers in a Row During Radiative CoolingJournal of Applied Physics, 1969
- Thermal Stress and Plastic Deformation of Thin Silicon SlicesJournal of Applied Physics, 1969
- Influence of dislocations on properties of shallow diffused transistorsIEEE Transactions on Electron Devices, 1969
- Diffusion Pipes in Silicon NPN StructuresJournal of the Electrochemical Society, 1969
- Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1964
- X-Ray Observations of Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1962
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956