A new hot carrier simulation method based on full 3D hydrodynamic equations
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- MINIMOS 3: A MOSFET simulator that includes energy balanceIEEE Transactions on Electron Devices, 1987
- MOSFET substrate current model including energy transportIEEE Electron Device Letters, 1987
- Simulation of GaAs IMPATT diodes including energy and velocity transport equationsIEEE Transactions on Electron Devices, 1983
- Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- Submicrometer MOSFET structure for minimizing hot-carrier generationIEEE Transactions on Electron Devices, 1982
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962