Dislocation motion and multiplication during the growth of silicon ribbon
- 31 August 1987
- journal article
- Published by Elsevier in Acta Metallurgica
- Vol. 35 (8) , 2091-2099
- https://doi.org/10.1016/0001-6160(87)90037-x
Abstract
No abstract availableKeywords
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- The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensationJournal of Crystal Growth, 1975
- The Forces Exerted on Dislocations and the Stress Fields Produced by ThemPhysical Review B, 1950