Hydrogen in GaN
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk ReactorJournal of the Electrochemical Society, 1995
- Photoemission capacitance transient spectroscopy of n-type GaNApplied Physics Letters, 1995
- H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Inverted order of acceptor and donor levels of monatomic hydrogen in siliconPhysical Review Letters, 1994
- Local vibrational modes in Mg-doped gallium nitridePhysical Review B, 1994
- Hydrogenation of p-type gallium nitrideApplied Physics Letters, 1994
- Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing RadiationJapanese Journal of Applied Physics, 1992
- Growth and Doping of GaN Films by ECR-Assisted MBEMRS Proceedings, 1992
- Hydrogen in Compound SemiconductorsMRS Proceedings, 1992
- Chapter 10 Hydrogen Migration and Solubility in SiliconPublished by Elsevier ,1991