H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
- 1 October 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (10A) , L1367
- https://doi.org/10.1143/jjap.33.l1367
Abstract
H-atom incorporation was studied for Mg-doped GaN grown by metalorganic chemical vapor deposition. H-atom incorporation was found to increase linearly with Mg concentration, suggesting the formation of simple complex between Mg and H atoms in GaN. Decrease of H-atom concentration was observed after thermal treatment in Ar, supporting the hypothesis that H-atom extraction plays an important role in obtaining low-resistivity p-type conduction.Keywords
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