Ion-beam-assisted growth of doped Si layers
- 1 December 1988
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 3 (6) , 1212-1217
- https://doi.org/10.1557/jmr.1988.1212
Abstract
The growth of preamorphized silicon layers doped by multiple energy implants of boron, phosphorus, and boron plus phosphorus ions was investigated under irradiation with a 600 keV Kr+ + beam. The target temperature was set in the range 250–450 °C. During irradiation the growth was measured in situ by transient reflectivity. Boron and phosphorus at a concentration of 1 × 1020/cm3 enhance the rate by a factor of 3 and 2, respectively, whilst in compensated samples the rate is still more than a factor of 2 higher than in intrinsic or Ge-doped samples. This growth rate is characterized by an activation energy of 0.32 ± 0.05 eV which is, within the experimental uncertainties, independent of the dopant. The results are tentatively explained in terms of an interaction between generated point defects and impurities that increases the lifetime of defects at the crystal–amorphous interface.Keywords
This publication has 20 references indexed in Scilit:
- Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperaturePhysical Review B, 1987
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped siliconPhysics Letters A, 1986
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Role of Electronic Processes in Epitaxial Recrystallization of Amorphous SemiconductorsPhysical Review Letters, 1983
- Compensating impurity effect on epitaxial regrowth rate of amorphized SiApplied Physics Letters, 1982
- Laser-Induced Solid Phase Crystallization in Amorphous Silicon FilmsMRS Proceedings, 1982
- Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in siliconJournal of Applied Physics, 1978
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977