Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped silicon
- 7 July 1986
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 116 (8) , 399-402
- https://doi.org/10.1016/0375-9601(86)90064-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Disorder production in ion implanted siliconPhysica Status Solidi (a), 1982
- Disorder production and amorphisation in ion implanted siliconRadiation Effects, 1980
- Radiation damage in silicon produced by phosphorus implantation: Random and aligned implantsRadiation Effects, 1978
- Electron irradiation damage in silicon containing carbon and oxygenJournal of Physics and Chemistry of Solids, 1970
- A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited PaperIEEE Transactions on Nuclear Science, 1969