Radiation damage in silicon produced by phosphorus implantation: Random and aligned implants

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Abstract
Silicon wafers 110 orientation have been implanted at room temperature at the constant energy of 200 KeV with doses between 5 × 1013 P+/cm2 and 5 × 1015 P+/cm2 both in random and channelling conditions to study the mechanism of damage formation and its recovery by annealing treatments. Random and channelling implants have shown different critical fluences for the silicon crystalline-amorphous transition, but similar recovery processes for radiation damage have been observed. A possible model is proposed to explain the crystal amorphisation produced by the ion bombardment, based on the concept of amorphous silicon by Richter and Breitling, developed by Grigorovici and Manaila. Both Rutherford back-scattering and transmission electron microscopy have been used to study the damage formation and its evolution after annealing, as these techniques give complementary results.