Ion implantation-lattice disorder

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Abstract
This review is directed toward some of the recent developments in the analysis of lattice disorder in ion-implanted silicon. Although the disorder picture has not been entirely clarified in silicon, many of the salient features have been identified. IR absorption and EPR measurements have been used to identify specific defects and correlation was found with anneal behavior in implanted and fast-neutron irradiated samples. Analysis of low temperature implants suggested that release of point defects (vacancies) played an important role in the growth of divacancies and the anneal of disorder. Depth distribution of defects have been investigated and compared with ion ranges and energy lost in atomic processes. Various models have been proposed for the nature of the disordered region around the ion track and the formation of an amorphous layer at high doses. The data indicates that the individual disordered regions are not primarily amorphous. The nature of ion implanted layers in compound semiconductors have not yet been as thoroughly investigated as those in silicon.