Injection of ions into thin insulating films from a glow discharge
- 1 June 1976
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6) , 2754-2756
- https://doi.org/10.1063/1.323003
Abstract
A glow discharge has been used to inject positive ions into thin films of SiO2 on Si at moderate temperatures (∼320 °C). The electrical properties of the films are drastically altered by the ion-injection process.This publication has 10 references indexed in Scilit:
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