Effects of Low-Energy Gas Discharges on Evaporated Metal-Semiconductor Contacts
- 1 August 1956
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 27 (8) , 843-847
- https://doi.org/10.1063/1.1722500
Abstract
Exposure of the surface of chemically clean 5 ohm-cm germanium to a low-energy gas discharge prior to evaporating onto it a platinum diode produced results dependent on the gas used. Exposure of n-type material to an oxygen or nitrogen discharge destroyed rectification completely; exposure to a hydrogen or argon discharge not only maintained it but tended to counteract the effect of the former gases. These results indicate that such oxygen and nitrogen bombardment lower the effective barrier, making the surface more n-type, but hydrogen and argon bombardment make it more p-type. This can be explained by the introduction of gas-dependent interface states.This publication has 12 references indexed in Scilit:
- Review of Germanium Surface PhenomenaJournal of Applied Physics, 1956
- Sparked Hydrogen Treatment of Germanium SurfacesJournal of Applied Physics, 1955
- Properties of metal to germanium contactsPhysica, 1954
- Measurement of the Surface Properties of GermaniumProceedings of the Physical Society. Section B, 1954
- Part V-The Properties of Metal to Semiconductor ContactsProceedings of the IRE, 1953
- The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier TransistorProceedings of the IRE, 1953
- Part II-Electrochemical Techniques for Fabrication of Surface-Barrier TransistorsProceedings of the IRE, 1953
- Changes of Surface Conductivity of Germanium with AmbientThe Journal of Physical Chemistry, 1953
- Surface Properties of GermaniumBell System Technical Journal, 1953
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947