Frequency dependence of cyclotron resonance in Si inversion layers
- 1 October 1975
- journal article
- research article
- Published by Taylor & Francis in C R C Critical Reviews in Solid State Sciences
- Vol. 5 (3) , 391-395
- https://doi.org/10.1080/10408437508243500
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low TemperaturesPhysical Review Letters, 1975
- Subharmonic structure of cyclotron resonance an inversion layer on SiSolid State Communications, 1974
- Far-Infrared Cyclotron Resonance in the Inversion Layer of SiliconPhysical Review Letters, 1974
- Cyclotron Resonance of Electrons in an Inversion Layer on SiPhysical Review Letters, 1974
- Theory of Cyclotron Resonance Line Shape in MOS Inversion LayersPublished by Springer Nature ,1974
- New submillimeter laser lines in optically pumped gas moleculesOptics Communications, 1973
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Transverse Magneto-Conductivity of a Two-Dimensional Electron GasJournal of the Physics Society Japan, 1972
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966