Impact of new materials, changes in physics and continued ULSI scaling on failure mechanisms and analysis
- 1 January 1999
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Scaling has pushed existing CMOS materials to their physical and reliability limits. New materials such as Cu, low-k interconnect dielectrics, and high-k gate dielectrics are required if the historical scaling rate is to continue. The benefits and trade-offs associated with these new CMOS materials introductions are discussed.Keywords
This publication has 6 references indexed in Scilit:
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969
- Thermal Stress and Low Cycle FatigueJournal of Applied Mechanics, 1966
- Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on SiliconJournal of the Electrochemical Society, 1966
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961