OBSERVATION OF MICROWAVE REPOPULATION MODULATION IN n-Si AT 77 °K
- 1 January 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (1) , 46-48
- https://doi.org/10.1063/1.1653026
Abstract
The microwave (9.61 GHz, dielectric constant of n‐Si was measured as a function of crystallographic orientation and as a function of applied dc electric field (warm electron conditions) at 77 °K lattice temperature. The dielectric constant was found to be anisotropic. An analysis of the results correlated with the observed free carrier repopulation shows a new contribution to the microwave properties. This contribution arises from a repopulation modulation at the microwave frequency.Keywords
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