A New Erasing And Row Decoding Scheme For Low Supply Voltage Operation 16Mb/64Mb Flash EEPROMs
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A 5 volt only 16M bit flash EEPROM cell with a simple stacked gate structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 4 Mb 5 V-only flash EEPROM with sector erasePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990