Influence of a magnetic field on 1/f noise in ambipolar semiconductors: Evidence of its surface origin
- 1 August 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8) , 5348-5351
- https://doi.org/10.1063/1.326634
Abstract
The influence of a transverse magnetic field on the electrical noise in ambipolar semiconductors (like intrinsic and near‐intrinsic germanium) is investigated as a function of surface treatment. When the transport of carriers across the sample is governed by the magnetoconcentration effect, it is shown that the very large increase of the 1/f noise is due to 1/f fluctuations of surface recombination velocities. Such fluctuations (which furthermore are proportional to the surface recombination velocity) also account for the most part of the highest frequency noise (beyond the inverse of the carrier effective lifetime).This publication has 7 references indexed in Scilit:
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