Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator

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Abstract
Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced band shrinkage effect in an optical amplifier section. It is found that a picosecond pulse as narrow as 18.6 ps full width at half‐maximum is generated and a high repetition rate of more than 3 GHz is obtained.