Electromodulation reflectance of low temperature grown GaAs
- 1 September 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (5) , 2603-2606
- https://doi.org/10.1063/1.366073
Abstract
We have studied low temperature grown GaAs by electromodulation reflectance spectroscopy for growth temperatures between 200 and 320 °C. The reflectance spectra can be observed only when the concentration of the arsenic antisite defect is lower than 3.4×10 19 cm −3 . The absence of the signal for a rich defect sample is related to the short carrier lifetime and surface depletion width. The transition energies of E 0 and E 1 are found to increase with the decrease of the growth temperatures. The increase of the transition energies is attributed to lattice mismatch and deviation of the stoichiometry.This publication has 19 references indexed in Scilit:
- Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAsApplied Physics Letters, 1996
- Low-Temperature Grown III-V MaterialsAnnual Review of Materials Science, 1995
- Native point defects in low-temperature-grown GaAsApplied Physics Letters, 1995
- Fermi level of low-temperature-grown GaAs on Si-δ-doped GaAsPhysical Review B, 1995
- LTMBE GaAs: present status and perspectivesMaterials Science and Engineering: B, 1993
- Molecular beam epitaxial GaAs grown at low temperaturesThin Solid Films, 1993
- Fermi level pinning in low-temperature molecular beam epitaxial GaAsApplied Physics Letters, 1992
- Role of excess As in low-temperature-grown GaAsPhysical Review B, 1992
- Novel contactless mode of electroreflectanceApplied Physics Letters, 1991
- Photoreflectance and X-Ray Photoelectron Spectroscopy in Lt MBE GaAsMRS Proceedings, 1991