Fermi level of low-temperature-grown GaAs on Si-δ-doped GaAs
- 15 June 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (23) , 17215-17218
- https://doi.org/10.1103/physrevb.51.17215
Abstract
We have studied the Fermi level of low-temperature-grown GaAs on the top of Si-δ-doped GaAs by photoreflectance. The Fermi levels of the as-grown and annealed samples are measured by a method which involves the photovoltaic effect and the Fermi-level pinning. Our measurements determine the position of the Fermi-level pinning, and the results have been discussed in connection with the defect model and the buried-Schottky-barrier model.Keywords
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