Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- 21 January 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (3) , 260-262
- https://doi.org/10.1063/1.104682
Abstract
We report a photoreflectance study of surface photovoltage (VS) effects on the determination of Fermi level pinning (VF) on (100) n‐GaAs in air and with W‐metal coverage (in situ) as a function of temperature (77 K<TI). The dependence of VS on T and I can be explained by a modification the theory of M. Hecht [Phys. Rev. B 41, 7918 (1990)] yielding a value of VF=0.73±0.02 V. The effect of metal coverage is to reduce the influence of VS.Keywords
This publication has 16 references indexed in Scilit:
- Photoreflectance study of surface Fermi level in GaAs and GaAlAsApplied Physics Letters, 1990
- Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopyPhysical Review B, 1990
- Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfacesPhysical Review Letters, 1990
- Determination of band bending at the Si(113) surface from photovoltage-induced core-level shiftsPhysical Review B, 1990
- Analytical model for I-V characteristics of JFETs with heavily doped channelsSolid-State Electronics, 1990
- Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model systemPhysical Review B, 1988
- Modulation spectroscopy as a tool for electronic material characterizationJournal of Electronic Materials, 1988
- Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model systemSolar Cells, 1987
- New normalization procedure for modulation spectroscopyReview of Scientific Instruments, 1987
- Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAsPhysical Review B, 1970