Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system
- 31 August 1987
- journal article
- Published by Elsevier in Solar Cells
- Vol. 21 (1-4) , 371-377
- https://doi.org/10.1016/0379-6787(87)90135-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well widthApplied Physics Letters, 1986
- Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theoryApplied Physics Letters, 1986
- Electrolyte Electroreflectance Study of Surface Optimization of n ‐ CuInSe2 in Photoelectrochemical Solar CellsJournal of the Electrochemical Society, 1986
- Electroreflection Measurements on Semiconductor/Electrolyte Interfaces to Determine the Voltage DistributionJournal of the Electrochemical Society, 1985
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985
- Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic EllipsometryPhysical Review Letters, 1984
- Pseudo‐Exciton Effect in the Schottky‐Barrier ElectroreflectancePhysica Status Solidi (b), 1982
- Investigation of the semiconductor–oxide electrolyte interface in GaAs utilizing electrolyte electroreflectanceJournal of Vacuum Science and Technology, 1980
- Observation of exciton quenching in GaAs at room temperature using electrolyte electroreflectanceSolid State Communications, 1980
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977