Photoreflectance study of surface Fermi level in GaAs and GaAlAs
Open Access
- 12 November 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (20) , 2118-2120
- https://doi.org/10.1063/1.103916
Abstract
Franz–Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find that the electric field obtained from the oscillations is in agreement with that derived from electrostatic calculations. Our results show that illumination from pump and probe beams in a normal photoreflectance experiment can significantly affect the measurement and thus erroneously lead to a reduced value of the electric field. The Fermi level on the bare surface of AlGaAs with different Al mole fraction has also been determined.Keywords
This publication has 13 references indexed in Scilit:
- Photoreflectance study of Fermi level changes in photowashed GaAsJournal of Vacuum Science & Technology B, 1990
- Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectanceApplied Physics Letters, 1990
- Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion regionApplied Physics Letters, 1989
- Characterization of Modulation Doped Pseudomorphic AlGaAs/InGaAs/GaAs Hemt Structures by Electron Beam Electroreflectance and PhotoluminescenceMRS Proceedings, 1989
- Photoreflectance surface Fermi level measurements of GaAs subjected to various chemical treatmentsJournal of Vacuum Science & Technology B, 1988
- Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatmentsJournal of Vacuum Science & Technology B, 1988
- Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model systemPhysical Review B, 1988
- Modulation spectroscopy as a tool for electronic material characterizationJournal of Electronic Materials, 1988
- New normalization procedure for modulation spectroscopyReview of Scientific Instruments, 1987
- The Schottky-barrier height of Au on n-Ga1−xAlxAs as a function of AlAs contentApplied Physics Letters, 1979