Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200 °C
- 8 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (23) , 2900-2902
- https://doi.org/10.1063/1.106813
Abstract
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2-like) and acceptor concentrations ND=9.9×1019 and NA=7.9×1018 cm−3, respectively, in a 2-μm-thick molecular-beam epitaxial GaAs layer grown at 200 °C on a 2-in.-diam semi-insulating wafer. Both lateral and depth uniformities of ND over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.Keywords
This publication has 6 references indexed in Scilit:
- Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxyPhysical Review B, 1992
- Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like bandPhysical Review B, 1990
- Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defectPhysical Review B, 1990
- Full-wafer mapping of total and ionized EL2 concentration in semi-insulating GaAs using infrared absorptionApplied Physics Letters, 1989
- Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1989
- Hole photoionization cross sections of EL2 in GaAsApplied Physics Letters, 1988