Crystal pulling and constitution in Pb1?xSnxTe
- 1 January 1968
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 3 (1) , 76-79
- https://doi.org/10.1007/bf00550892
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Optical energy gaps of PbSe-SnTe, PbSe-SnSe, PbTe-SnTe and PbTe-SnSeBritish Journal of Applied Physics, 1967
- Inversion of Conduction and Valence Bands inAlloysPhysical Review B, 1967
- DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTeApplied Physics Letters, 1966
- PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODESApplied Physics Letters, 1966
- Reproducible preparation of Sn1−xPbxTe epitaxial films with moderate carrier concentrationsMaterials Science and Engineering, 1966
- Band Structure and Laser Action inPhysical Review Letters, 1966
- A Chemical Polish for Tin TellurideJournal of the Electrochemical Society, 1966
- Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystalsJournal of Physics and Chemistry of Solids, 1965
- A Technique for Pulling Single Crystals of Volatile MaterialsJournal of Applied Physics, 1962
- Constitutional supercooling during crystal growth from stirred metls—II: Experimental: Gallium-doped germaniumSolid-State Electronics, 1961