Comparison of resistivity measurement techniques on epitaxial silicon
- 30 June 1963
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (3) , 311-313
- https://doi.org/10.1016/0038-1101(63)90089-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957
- Rectifying Semiconductor ContactsJournal of the Electrochemical Society, 1956