Breakdown analysis of an asymmetrical double recessed power MESFET's

This publication has 8 references indexed in Scilit:

• A heterostructure FET with 75.8-percent power added efficiency at 10 GHz
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Dependence of ionization current on gate bias in GaAs MESFETs
  IEEE Transactions on Electron Devices, 1993
• New pseudomorphic N ⁻ /N ⁺ GaAs/InGaAs/GaAs power HEMT with high breakdown voltages
  Electronics Letters, 1991
• Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
  IEEE Transactions on Electron Devices, 1988
• A new method for determining the FET small-signal equivalent circuit
  IEEE Transactions on Microwave Theory and Techniques, 1988
• The role of the device surface in the high voltage behaviour of the GaAs MESFET
  Solid-State Electronics, 1986
• Theoretical analysis of the DC avalanche breakdown in GaAs MESFET's
  IEEE Transactions on Electron Devices, 1983