Vacancy defects in as-grown and neutron irradiated GaP studied by positrons
- 18 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (7) , 385-387
- https://doi.org/10.1063/1.97595
Abstract
Positron lifetime and Doppler-broadening measurements have been used to study vacancy defects in n-type GaP. Vacancies in the P sublattice with a concentration of some 1017 cm−3 were observed in as-grwon GaP. The vacancies disappear during annealing at 500–800 °C. In neutron-irradiated GaP positrons are trapped by Ga vacancies which anneal out in two stages situated at 300–550 °C and 550–700 °C.Keywords
This publication has 12 references indexed in Scilit:
- Detection of Ga vacancies in electron irradiated GaAs by positronsApplied Physics Letters, 1986
- Positron study of native vacancies in doped and undoped GaAsJournal of Physics C: Solid State Physics, 1986
- Vacancy-Zn complexes in InP studied by positronsApplied Physics Letters, 1985
- Correlations between DLTS and EPR measurements of the Ga vacancy in GaPJournal of Physics C: Solid State Physics, 1984
- Investigation of defects in gallium arsenide using positron annihilationPhysical Review B, 1984
- Study of the ideal-vacancy-induced neutral deep levels in III-V compound semiconductors and their ternary alloysPhysical Review B, 1981
- Quantitative esr analysis of deep defects in LEC-grown GaPJournal of Electronic Materials, 1981
- Nonstoichiometry and nonradiative recombination in GaPJournal of Electronic Materials, 1975
- The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenideAdvances in Physics, 1975
- Neutron Damage in GaP Light-Emitting DiodesApplied Physics Letters, 1972