Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 877-880
- https://doi.org/10.1016/0022-0248(93)90751-h
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 4 references indexed in Scilit:
- Molecular-beam-epitaxial growth of n-AlGaAs on clean Cl2-gas etched GaAs surfaces and the formation of high mobility two-dimensional electron gas at the etch-regrown interfacesApplied Physics Letters, 1992
- Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wiresApplied Physics Letters, 1991
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980