Selective InAlAs/InGaAs MBE growth for high frequency OEIC applications
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 892-895
- https://doi.org/10.1016/0022-0248(93)90754-k
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Molecular beam epitaxial growth and structural design of In0.52Al0.48As/In0.53Ga0.47As/InP HEMTsJournal of Crystal Growth, 1991
- Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlatticeApplied Physics Letters, 1989
- GaAs planar technology by molecular beam epitaxy (MBE)Journal of Applied Physics, 1975