Molecular beam epitaxial growth and structural design of In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs
Open Access
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 489-494
- https://doi.org/10.1016/0022-0248(91)91026-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The application of RHEED intensity effects to interrupted growth and interface formation during MBE growth of GaAs/(Al, Ga)As structuresApplied Physics A, 1988
- RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsSurface Science, 1986
- The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beamIEEE Electron Device Letters, 1983
- Optical quality GaInAs grown by molecular beam epitaxyJournal of Electronic Materials, 1982
- Alloy Clustering inCompound Semiconductors Grown by Molecular Beam EpitaxyPhysical Review Letters, 1982
- Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET'sIEEE Transactions on Electron Devices, 1980
- Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the SuperlatticeJournal of the Physics Society Japan, 1980
- Effect of dopants on transmission loss of low-OH-content optical fibresElectronics Letters, 1976