Deposition and characterization of Er+3-doped, Al co-doped sol-gel silica films on SOS
- 1 May 1999
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 230 (1) , 55-60
- https://doi.org/10.1080/00150199908214898
Abstract
Up to 18 layers of crack-free Er-doped sol-gel silica films co-doped with Al were deposited on SOS (silica on silicon) by multiple spin-coating and rapid thermal processing (RTP). The properties of the films were studied using ellipsometry, FTIR (Fourier Transform Infrared) Spectroscopy, AFM (atomic force microscopy) and XRD (X-ray diffraction). The results showed that, compared with air environment, a moderate (45–50 mbar) vacuum annealing environment could remove water molecules (H2O) in the prepared film more effectively and yield smoother film surface.Keywords
This publication has 2 references indexed in Scilit:
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